1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them

被引：0
|
作者：
A. V. Sakharov
I. L. Krestnikov
N. A. Maleev
A. R. Kovsh
A. E. Zhukov
A. F. Tsatsul’nikov
V. M. Ustinov
N. N. Ledentsov
D. Bimberg
J. A. Lott
Zh. I. Alferov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Technische Universität Berlin,Institut für Festkörperphysik
[3] Air Force Institute of Technology,Department of Electrical and Computer Engineering
来源：
Semiconductors | 2001年 / 35卷
关键词：
GaAs; Spectral Range; Magnetic Material; Spectral Characteristic; Active Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Various structures with optical microcavities and active layers based on InGaAs/GaAs quantum dots MBE-grown on GaAs substrates were studied theoretically and experimentally. LEDs for the 1.3 µm spectral range with narrow spectral characteristics and low light beam divergence were fabricated. Vertical lasing at 1.3 µm was obtained in a structure with oxidized AlO/GaAs mirrors under injection pumping.
引用
收藏
页码：854 / 859
页数：5
相关论文
共 50 条
  • [1] 1.3 μm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
    Sakharov, AV
    Krestnikov, IL
    Maleev, NA
    Kovsh, AR
    Zhukov, AE
    Tsatsul'nikov, AF
    Ustinov, VM
    Ledentsov, NN
    Bimberg, D
    Lott, JA
    Alferov, ZI
    SEMICONDUCTORS, 2001, 35 (07) : 854 - 859
  • [2] 1.3μm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots
    Ngo, C. Y.
    Yoon, S. F.
    Loke, W. K.
    Cao, Q.
    Lim, D. R.
    Wong, Vincent
    Sim, Y. K.
    Chua, S. J.
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 2825 - +
  • [3] Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    Blokhin, S. A.
    Kryzhanovskaya, N. V.
    Moiseev, E. I.
    Bobrov, M. A.
    Kuz'menkov, A. G.
    Blokhin, A. A.
    Vasil'ev, A. P.
    Karpovskii, I. O.
    Zadiranov, Yu. M.
    Troshkov, S. I.
    Nevedomskii, V. N.
    Nikitina, E. V.
    Maleev, N. A.
    Ustinov, V. M.
    TECHNICAL PHYSICS LETTERS, 2016, 42 (10) : 1009 - 1012
  • [4] Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    S. A. Blokhin
    N. V. Kryzhanovskaya
    E. I. Moiseev
    M. A. Bobrov
    A. G. Kuz’menkov
    A. A. Blokhin
    A. P. Vasil’ev
    I. O. Karpovskii
    Yu. M. Zadiranov
    S. I. Troshkov
    V. N. Nevedomskii
    E. V. Nikitina
    N. A. Maleev
    V. M. Ustinov
    Technical Physics Letters, 2016, 42 : 1009 - 1012
  • [5] Photoelectrical properties of 1.3 μm emitting InAs quantum dots in InGaAs matrix
    Persano, A
    Cola, A
    Vasanelli, L
    Convertino, A
    Leo, G
    Cerri, L
    Frassanito, MC
    Viticoli, S
    ACTA PHYSICA POLONICA A, 2005, 107 (02) : 381 - 387
  • [6] Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 μm vertical cavity surface emitting lasers
    Lott, JA
    Ledentsov, NN
    Kovsh, AR
    Ustinov, VM
    Bimberg, D
    2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2003, : 499 - 500
  • [7] Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3-1.55-μm
    Golovynskyi, Sergii
    Datsenko, Oleksandr I.
    Seravalli, Luca
    Trevisi, Giovanna
    Frigeri, Paola
    Babichuk, Ivan S.
    Golovynska, Iuliia
    Qu, Junle
    NANOSCALE RESEARCH LETTERS, 2018, 13
  • [8] Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window
    Sergii Golovynskyi
    Oleksandr I. Datsenko
    Luca Seravalli
    Giovanna Trevisi
    Paola Frigeri
    Ivan S. Babichuk
    Iuliia Golovynska
    Junle Qu
    Nanoscale Research Letters, 2018, 13
  • [9] Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm
    Fiore, A
    Borri, P
    Langbein, W
    Hvam, JM
    Oesterle, U
    Houdré, R
    Stanley, RP
    Ilegems, M
    APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3430 - 3432
  • [10] InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices
    M. V. Maximov
    I. L. Krestnikov
    Y. M. Shernyakov
    A. E. Zhukov
    N. A. Maleev
    Y. G. Musikhin
    V. M. Ustinov
    Zh. I. Alferov
    A. Y. Chernyshov
    N. N. Ledentsov
    D. Bimberg
    T. Maka
    C. M. Sotomayor Torres
    Journal of Electronic Materials, 2000, 29 : 487 - 493
12345