Two intermediate bands solar cells of InGaN/InN quantum dot supracrystals

Two intermediate bands solar cells (2-IBSC) of InxGa1−xN/InN cubic quantum dot supracrystals were designed in this work. Position and width of the two IBs were determined, the performance parameters including short circuit current density, open circuit voltage and photoelectric conversion efficiency were numerically calculated, and their variations with adjustable variables such as In content, average size of QDs and interdot spacing were further discussed. Within a certain range, the influence from these adjustable variables on the first IB stronger than that on the second one was indicated. The cause of the maximum efficiency in the present cell lower than the one of another 2-IBSC with different material [Jenks and Gilmore, J Renew Sustain Energy 2:013111 (2010)] was probed, while the reason for the maximum efficiency of the studying device near to that of 1-IBSC with same material [Zhang and Wei, Appl Phys A 113:75 (2013)] was clarified.