A magnetically controlled LED with S-shaped current-voltage characteristic

被引：0
|
作者：
A. V. Kudrin
M. V. Dorokhin
Yu. A. Danilov
机构：
[1] Nizhni Novgorod State University,Physico
[2] Nizhni Novgorod State University,Technical Research Institute
来源：
Technical Physics Letters | 2012年 / 38卷
关键词：
GaAs; Vapor Phase Epitaxy; Negative Differential Resistance; High Resistance State; Diode Structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A p-i-n light-emitting diode (LED) structure with InGaAs/GaAs quantum wells has been manufactured by combining the vapor phase epitaxy and laser ablation methods. The obtained heterostructures exhibit a negative differential resistance and the magnetodiode effect at 77 K. The proposed LED structure admits (i) switching from the low- to high-resistance state by applied pulsed bias voltage and (ii) electroluminescence quenching by external magnetic field.
引用
收藏
页码：1045 / 1047
页数：2
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