A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes

被引：0
|
作者：
Yu. A. Goldberg
O. V. Konstantinov
V. M. Lantratov
O. I. Obolensky
T. V. Petelina
E. A. Posse
M. Z. Shvarts
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1999年 / 33卷
关键词：
GaAs; Photon Energy; Magnetic Material; Electromagnetism; Quantum Efficiency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A comparison is made of how the quantum efficiencies for photoelectric conversion in p-n-and m-s-structures based on GaAs depend on temperature. For photon energies less than or the same order as the width of the band gap, the temperature dependences of the p-n-and m-s-structures are similar. In the range of photon energies larger than the width of the band gap, the quantum efficiency of p-n-structures is temperature independent, whereas the quantum efficiency of m-s-structures exhibits a strong temperature dependence. A qualitative explanation of this phenomenon is given.
引用
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页码：804 / 806
页数：2
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