Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers

被引：0
|
作者：
D. A. Livshits
A. Yu. Egorov
I. V. Kochnev
V. A. Kapitonov
V. M. Lantratov
N. N. Ledentsov
T. A. Nalyot
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2001年 / 35卷
关键词：
Output Power; Active Region; Power Density; Magnetic Material; Conversion Efficiency;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Continuous-wave output powers of 9.2 W at a constant heatsink temperature of 10°C and 12.2 W at a stabilized temperature of the active region have been obtained on an InGaAs/AlGaAs laser with a 0.4-µm-thick waveguide, operating at 1.03 µm. Record-breaking output mirror power densities of, respectively, 29.9 and 40 MW/cm2 have been achieved without catastrophic optical mirror damage in the two temperature-stabilization regimes. A maximum power conversion efficiency of 66% has been achieved in a laser with a cavity length of 2 mm.
引用
收藏
页码：365 / 369
页数：4
相关论文
共 50 条
  • [41] ANALYSIS AND OPTIMIZATION OF QUANTUM-WELL THICKNESS FOR GAAS/ALGAAS AND INGAAS/GAAS/ALGAAS QUANTUM-WELL LASERS
    ZOU, WX
    MERZ, JL
    COLDREN, LA
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5047 - 5055
  • [42] Facet Cooling in High-Power InGaAs/AlGaAs Lasers
    Arslan, Seval
    Gundogdu, Sinan
    Demir, Abdullah
    Aydinli, Atilla
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (01) : 94 - 97
  • [43] High power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure
    Fujimoto, T
    Yamada, Y
    Yamada, Y
    Okubo, A
    Oeda, Y
    Muro, K
    IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 38 - 45
  • [44] MODAL-ANALYSIS OF INCGAASP-INP, GAAS/ALGAAS-GAAS, AND INGAASP/ALGAAS-GAAS MIS HETEROSTRUCTURE LASERS
    KAZI, K
    JAIN, FC
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1986, 7 (06): : 891 - 907
  • [45] A study of high-power InGaAs/AlGaAs/GaAs 45° folded cavity surface-emitting lasers
    Li, M
    Zhang, BS
    Li, H
    Bo, BX
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 610 - 613
  • [46] Temperature Dependence of the Output Optical Power of Semiconductor Lasers-Thyristors Based on AlGaAs/GaAs/InGaAs Heterostructures
    Gavrina, P. S.
    Podoskin, A. A.
    Shushkanov, I. V.
    Slipchenko, S. O.
    Pikhtin, N. A.
    Bagaev, T. A.
    Ladugin, M. A.
    Marmalyuk, A. A.
    Simakov, V. A.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2024, 51 (SUPPL 7) : S525 - S532
  • [47] Low threshold InGaAs/AlGaAs lasers grown on (111)B GaAs substrate
    Khoo, EA
    Pabla, AS
    Woodhead, J
    David, JPR
    Grey, R
    Rees, GJ
    ELECTRONICS LETTERS, 1997, 33 (11) : 957 - 958
  • [48] Linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR reflectivities
    Fang, DW
    Zheng, YJ
    Manzanedo, C
    Reuel, S
    Li, CX
    PROCEEDINGS OF THE SECOND INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 2, 2002, : 448 - 451
  • [49] AlGaAs/InGaAs/GaAs high-power 1060 nm diode lasers with reduced fast axis divergence
    Zalevsky, ID
    Bezotosny, VV
    Davidova, EI
    Koniaev, VP
    Marmalyuk, AA
    Padalitsa, AA
    Shishkin, VA
    ADVANCED HIGH-POWER LASERS, 2000, 3889 : 566 - 571
  • [50] Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers
    Pierscinska, D.
    Gutowski, P.
    Haldas, G.
    Kolek, A.
    Sankowska, I.
    Grzonka, J.
    Mizera, J.
    Pierscinski, K.
    Bugajski, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (03)
12345