Analysis of the emission band of VGaTeAs complexes in n-GaAs under uniaxial pressure

For approximating the insignificant deviation of the axes of radiating optical dipoles of VGaTeAs complexes in GaAs from one of the 〈111〉 directions, the shape of the structureless photoluminescence band of these defects at a pressure of 10 kbar along the [111] axis is analyzed. For separating split components of this band, which belong to centers with different orientations, a procedure is developed which uses the laws of the piezospectroscopic behavior of anisotropic centers. According to this procedure, spectral measurements are carried out when the electric vector of the optical wave is either parallel or normal to the pressure axis. The model suggested for analysis is verified. It is determined that the splitting of the energies of the centers with different orientations at a pressure of 10 kbar is approximately equal to 38 meV. In this case, the relative fraction of the rotator that describes the polarization properties of light emitted by an individual complex in a classical dipole approximation is equal to 0.15. This fact is indicative of the comparability of the roles of spin-orbit and Jahn-Teller interactions in the formation of the emitting state of the complex.