Single-electron quantum dots in silicon MOS structures

被引：0
|
作者：
M. Khoury
A. Gunther
S. Miličić
J. Rack
S.M. Goodnick
D. Vasileska
T.J. Thornton
D.K. Ferry
机构：
[1] Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University,
[2] Tempe,undefined
[3] AZ 85287-5706,undefined
[4] USA,undefined
来源：
Applied Physics A | 2000年 / 71卷
关键词：
PACS: 73.23.Hk; 73.40.Gk; 71.10.Ca;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.
引用
收藏
页码：415 / 421
页数：6
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