Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method

被引：0

作者：

Zan Zheng

Hongjian Zhao

Wenjian Weng

Gaorong Han

Ning Ma

Piyi Du

机构：

[1] Zhejiang University,State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering

来源：

Journal of Materials Science: Materials in Electronics | 2011年 / 22卷

关键词：

Oxygen Vacancy; Ferroelectric Property; Perovskite Phase; TiO3 Thin Film; Loop Area;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

(PbySr1−y)ZnxTi1−xO3−x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology and ferroelectric property of the thin film were studied. All the thin films show the typical perovskite phase structure. Both the crystallinity and c/a ratio of the perovskite phase increases initially and then decreases gradually with doping Zn in the thin film. Ferroelectric properties of the Zn-doped PST thin films, including ferroelectric hysteresis-loop, remnant polarization and coercive force, decrease gradually with increasing Zn. And the effect of Zn on ferroelectric properties is more obvious in PST thin film with high content of Pb than that with low Pb although the high lead thin film exhibits high intrinsic ferroelectric properties.

引用

页码：351 / 358

页数：7

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