Nanofabrication of arbitrary patterns by nano plastic forming and etching (NPFE)

In this paper, flexibility of nano plastic forming and etching, an ultra-high resolution nanofabrication process developed recently by the authors, in terms of fabrication of arbitrary patterns as well as applicability to various work materials is demonstrated. First, a thin layer of nickel (Ni) is deposited on a silicon (Si) substrate. Then, it is directly patterned by nano plastic forming. Next, the patterned Ni mask is slightly etched by direct current sputter etching to transfer the pattern into the entire mask thickness and expose the surface of the substrate in the individual patterned areas. Afterward, the pattern is transferred onto the substrate by reactive ion etching. Finally, the remained Ni layer is removed from the substrate, and nanostructures fabricated on the surface of the substrate are revealed. Fabrication of grid patterns with various pitch settings on the surface of Si substrates is demonstrated. The experimental results indicate that the depth and width of the nanostructures can be controlled by the etching time. Also, it is confirmed from the results that the depth and width are not influenced by the pitch setting.