Monolayer MoS2 epitaxy

被引:0
|
作者
Zheng Wei
Qinqin Wang
Lu Li
Rong Yang
Guangyu Zhang
机构
[1] Chinese Academy of Sciences,Beijing National Laboratory for Condensed Matter Physics and Institute of Physics
[2] University of Chinese Academy of Sciences,School of Physical Sciences
[3] Songshan Lake Materials Laboratory,undefined
来源
Nano Research | 2021年 / 14卷
关键词
monolayer MoS; epitaxy; domain size; domain alignment; heterostructures;
D O I
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中图分类号
学科分类号
摘要
As an emerging two-dimensional (2D) semiconductor material, monolayer MoS2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS2 monolayers. Here, we review the epitaxial growth of monolayer MoS2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.
引用
收藏
页码:1598 / 1608
页数:10
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