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Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure
被引:0
|作者:
K. Gnanasekar
K. Navaneethakrishnan
机构:
[1] The American College,
[2] School of Physics,undefined
[3] Madurai-Kamaraj University,undefined
来源:
关键词:
85.75.Mm Spin polarized resonant tunnel junctions;
72.20.-i Conductivity phenomena in semiconductors and insulators;
73.40.Gk Tunneling;
73.63.Hs Quantum wells;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
Spin-dependent Floquet scattering theory is developed to investigate the
photon-assisted spin-polarized electron transport through a semiconductor
heterostructure in the presence of an external electric field.
Spin-dependent Fano resonances and spin-polarized electron transport through
a laser irradiated time-periodic non-magnetic heterostructure in the
presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba
spin-orbit interaction are investigated. The electric field due to laser
along with the spin-orbit interactions help to get spin-dependent Fano
resonances in the conductance, whereas the external bias can be
appropriately adjusted to get a near 80% spin-polarized electron
transmission through heterostructures. The resultant nature of the Floquet
scattering depends on the relative strength of these two electric fields.
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页码:455 / 461
页数:6
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