EBIC characterization of strained Si/SiGe heterostructures

被引：0
|
作者：
E. B. Yakimov
R. H. Zhang
G. A. Rozgonyi
M. Seacrist
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology and High
[2] North Carolina State University,Purity Materials
[3] MEMC Electronic Materials,Department of Materials Science and Engineering
来源：
Semiconductors | 2007年 / 41卷
关键词：
68.37.Hk; 72.80.Cw;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800°C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on Eb. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.
引用
收藏
页码：402 / 406
页数：4
相关论文
共 50 条
  • [11] Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructures
    Burbaev, T. M.
    Bagaev, V. S.
    Bobrik, E. A.
    Kurbatov, V. A.
    Novikov, A. V.
    Rzaev, M. M.
    Sibeldin, N. N.
    Schaeffler, F.
    Tsvetkov, V. A.
    Tarakanov, A. G.
    Zaitsev, V. V.
    THIN SOLID FILMS, 2008, 517 (01) : 55 - 56
  • [12] Impact ionization in strained-Si/SiGe heterostructures
    Waldron, NS
    Pitera, AJ
    Lee, ML
    Fitzgerald, EA
    del Alamo, JA
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 813 - 816
  • [13] 2DEG IN STRAINED SI/SIGE HETEROSTRUCTURES
    FANG, FF
    SURFACE SCIENCE, 1994, 305 (1-3) : 301 - 306
  • [14] Formation of microtubes from strained SiGe/Si heterostructures
    Qin, H
    Shaji, N
    Merrill, NE
    Kim, HS
    Toonen, RC
    Blick, RH
    Roberts, MM
    Savage, DE
    Lagally, MG
    Celler, G
    NEW JOURNAL OF PHYSICS, 2005, 7
  • [15] Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures
    Lu, Jinggang
    Rozgonyi, George
    Seacrist, Mike
    Chaumont, Michelle
    Campion, Alan
    Journal of Applied Physics, 2008, 104 (07):
  • [16] Growth of strained Si on He ion implanted Si/SiGe heterostructures
    Buca, D
    Feste, SF
    Holländer, B
    Mantl, S
    Loo, R
    Caymax, M
    Carius, R
    Schaefer, H
    SOLID-STATE ELECTRONICS, 2006, 50 (01) : 32 - 37
  • [17] Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures
    Lu, Jinggang
    Rozgonyi, George
    Seacrist, Mike
    Chaumont, Michelle
    Campion, Alan
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)
  • [18] Fabrication of strained Si/strained SiGe/strained si heterostructures on insulator by a bond and etch-back technique
    Åberg, I
    Olubuyide, OO
    Li, J
    Hull, R
    Hoyt, JL
    2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2004, : 35 - 36
  • [19] Carrier transport and velocity overshoot in strained Si on SiGe heterostructures
    Ferry, DK
    Formicone, G
    Vasileska, D
    EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES, 1998, 533 : 31 - 42
  • [20] Single-electron transistor in strained Si/SiGe heterostructures
    Berer, Thomas
    Pachinger, Dietmar
    Pillwein, Georg
    Muehlberger, Michael
    Lichtenberger, Herbert
    Brunthaler, Gerhard
    Schaeffler, F.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 34 (1-2): : 456 - 459
12345