EBIC characterization of strained Si/SiGe heterostructures

被引：0
|
作者：
E. B. Yakimov
R. H. Zhang
G. A. Rozgonyi
M. Seacrist
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology and High
[2] North Carolina State University,Purity Materials
[3] MEMC Electronic Materials,Department of Materials Science and Engineering
来源：
Semiconductors | 2007年 / 41卷
关键词：
68.37.Hk; 72.80.Cw;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800°C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on Eb. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.
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页码：402 / 406
页数：4
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