Reconfigurable logic and in-sensor encryption operations in an asymmetrically tunable van der Waals heterostructure

被引:0
|
作者
Fan Gong
Wenjie Deng
Yi Wu
Fengming Liu
Yihao Guo
Zelin Che
Jingjie Li
Jingzhen Li
Yang Chai
Yongzhe Zhang
机构
[1] Beijing University of Technology,Key Laboratory of Optoelectronics Technology of Education Ministry of China, Faculty of Information Technology
[2] Beijing University of Technology,Key Laboratory of Advanced Functional Materials, Ministry of Education, Faculty of Materials and Manufacturing
[3] Hong Kong Polytechnic University,Department of Applied Physics
来源
Nano Research | 2024年 / 17卷
关键词
in-sensor encryption; reconfigurable logic; van der Waals heterostructure; asymmetrical tunable architecture;
D O I
暂无
中图分类号
学科分类号
摘要
Reconfigurable devices can be used to achieve multiple logic operation and intelligent optical sensing with low power consumption, which is promising candidates for new generation electronic and optoelectronic integrated circuits. However, the versatility is still limited and need to be extended by the device architectures design. Here, we report an asymmetrically gate two-dimensional (2D) van der Waals heterostructure with hybrid dielectric layer SiO2/hexagonal boron nitride (h-BN), which enable rich function including reconfigurable logic operation and in-sensor information encryption enabled by both volatile and nonvolatile optoelectrical modulation. When the partial gate is grounded, the non-volatile light assisted electrostatic doping endowed partially reconfigurable doping between n-type and p-type, which allow the switching of logic XOR and not implication (NIMP). When the global gate is grounded, additionally taking the optical signal as another input signal, logic AND and OR is realized by combined regulation of the light and localized gate voltage. Depending on the high on/off current ratio approaching 105 and reliable & switchable logic gate, in-sensor information encryption and decryption is demonstrated by manipulating the logic output. Hence, these results provide strong extension for current reconfigurable electronic and optoelectronic devices.
引用
收藏
页码:3113 / 3119
页数:6
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