First-Principle Investigations of Structural, Electronic, and Half-Metallic Ferromagnetic Properties in In1−xTMxP (TM = Cr, Mn)

被引:0
|
作者
M. Boutaleb
A. Tadjer
B. Doumi
A. Djedid
A. Yakoubi
F. Dahmane
B. Abbar
机构
[1] Physics Department,Modelling and Simulation in Materials Science Laboratory
[2] Djillali Liabes University of Sidi Bel-Abbes,undefined
来源
Journal of Superconductivity and Novel Magnetism | 2014年 / 27卷
关键词
Spintronics; Half metals; Ferromagnetic properties; Electronic structures; (Cr; Mn)-doped InP;
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中图分类号
学科分类号
摘要
First-principle calculations within the framework of density functional theory are employed to study the structural, electronic, and half-metallic ferromagnetic properties of In1−x (TM)xP (TM = Cr, Mn) at concentrations (x = 0.0625, 0.125, 0.25)of transition metal in zinc blende phase. The investigations of electronic and magnetic properties indicate that In1−xTMxP (TM = Cr, Mn) at x = 0.0625, 0.125, and 0.25 are half-metallic ferromagnets with 100 % magnetic spin polarization. On the one hand, the total magnetization is an integer Bohr magneton of 3 μB and 4 μB for In1−xCrxP and In1−xMnxP, respectively, which confirms the half-metallic feature of In1−xTMxP compounds. On the other hand, the densities of states of majority-spin states show that the large hybridization between 3p (P) and 3d (TM) partially filled states dominates the gap, which stabilizes the ferromagnetic state configuration associated with double-exchange mechanism. The band structures depict that half-metallic gap at x = 0.0625 is 0.404 eV for In1−xCrxP which is higher than 0.125 eV for In1−xMnxP. Therefore, the largest half-metallic gap in In1−xCrxP at low concentration x = 0.0625 reveals that Cr-doped InP seem to be a more potential candidate than that Mn-doped InP for spin injection applications in the field of spintronic devices.
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页码:1603 / 1614
页数:11
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