GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

We review the present status of InGaAs quantum dot lasers on GaAs sub-strates emitting near and at 1.3 µm. Such lasers are shown to be extremely promising for cost-efficient commercial applications in optical fiber communication. Threshold current densities a low as ∼20 Acm−2 per QD sheet are achieved. Room temperature continuous wave operation at 2.7 W for broad stripe devices is demonstrated. The maximum differential efficiency amounts to 57%. Moreover, single lateral mode continuous wave operation with a maximum output power of 110 mW is realized. Prospects for 1.3 µm GaAs-based vertical cavity surface emitting lasers are given. We also show that the longest wavelength of QD GaAs-based light emitting devices can be potentially extended to 1.7 µm.