Spontaneous direct bonding of thick silicon nitride

被引：22
|
作者：
Sanchez, S
Gui, C
Elwenspoek, M
机构：
[1] MESA Research Institute, University of Twente, PO Box 217
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1997年 / 7卷 / 03期
关键词：
D O I：
10.1088/0960-1317/7/3/007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wafers with 1 mu m LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.
引用
收藏
页码：111 / 113
页数：3
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