Electrical properties of beta-FeSi2 bulk crystal grown by horizontal gradient freeze method

被引：2
|
作者：
Shibata, H [1 ]
Makita, Y [1 ]
Kakemoto, H [1 ]
Tsai, Y [1 ]
Sakuragi, S [1 ]
Katsumata, H [1 ]
Obara, A [1 ]
Kobayashi, N [1 ]
Uekusa, S [1 ]
Tsukamoto, T [1 ]
Tsunoda, T [1 ]
Imai, Y [1 ]
机构：
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
来源：
PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1996年
关键词：
D O I：
10.1109/ICT.1996.553257
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：62 / 66
页数：5
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