The transient photomagnetic effect in multilayer structures with p-n junctions

被引：0
|
作者：
Agarev, VN [1 ]
Stafeev, VI [1 ]
机构：
[1] Orion Sci & Ind Assoc, Moscow 111123, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 09期
关键词：
Magnetic Field; Magnetic Material; Electromagnetism; Multilayer Structure; High Magnitude;
D O I：
10.1134/1.1309423
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A transient voltage occurring after bias switching in a supermultilayer structure consisting of series-connected p-n junctions is analyzed. It is shown that a transient photomagnetic effect of a very high magnitude can be induced in such structures by illumination in the presence of a magnetic field.
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页码：1062 / 1063
页数：2
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