Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

被引：6

作者：

Korsunskaya, NE ^{[1
]}

Kaganovich, EB ^{[1
]}

Khomenkova, LY ^{[1
]}

Bulakh, BM ^{[1
]}

Dzhumaev, BR ^{[1
]}

Beketov, GV ^{[1
]}

Manoilov, EG ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期

关键词：

porous silicon; photoluminescence; excitation bands; surface substances; layer structure;

D O I：

10.1016/S0169-4332(00)00448-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Plenty photoluminescence (PL) and plenty photoluminescence excitation (PLE) spectra, as well as layer structure and surface substances on Si crystallites of porous silicon prepared by different technique, have been investigated by photoluminescence, atomic force microscope (AFM) and infrared (IR) transmission methods. It is shown that PLE spectra, consisted of several excitation bands, do not depend on Si crystallites sizes. The nature of excitation bands is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：349 / 353

页数：5

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