CuInSe2 Formation by selenization of sequentially evaporated metallic layers

被引：53
|
作者：
Caballero, R [1 ]
Guillén, C [1 ]
机构：
[1] Dept Energias Renovables Ciemat, Madrid 28040, Spain
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 86卷 / 01期
关键词：
CuInSe2; Cu-In alloys; sequential evaporations;
D O I：
10.1016/j.solmat.2004.05.019
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
CuInSe2 (CIS) thin films were grown by selenization of sequentially evaporated metallic precursors. Different types of sequential processes of evaporation have been tested: Cu/In/Cu/In, In/Cu/In/Cu and In/Cu/In. The selenization procedure was carried out within a partially closed graphite container. The CIS films showed single-phase chalcopyrite structure with preferential orientation in the (112) direction after 500degreesC selenization. The CIS surface morphology depended on the sequence used. The In/Cu/In seemed to be the best. An energy band gap above 0.95 eV and an absorption coefficient near 10(5) cm(-1) were obtained and similar optical properties were observed for all the prepared sequences. (C) 2004 Elsevier B.V. All rights reserved.
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页码：1 / 10
页数：10
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