Spray deposited zinc tungstate thin film for non-volatile memory application

被引：10
|
作者：
Patil, Amitkumar R. [1 ]
Dongale, Tukaram D. [2 ]
Kamat, Rajanish K. [3 ]
Rajpure, Keshav Y. [1 ]
机构：
[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India
[2] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur 416004, Maharashtra, India
[3] Shivaji Univ, Dept Elect, Kolhapur 416004, Maharashtra, India
来源：
MATERIALS LETTERS | 2022年 / 322卷
关键词：
Resistive switching; Thin films; Rietveld ?s refinement; Electrical properties; Non-volatile memory;
D O I：
10.1016/j.matlet.2022.132494
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Ag/ZWO/FTO resistive switching (RS) device was fabricated using the chemical spray pyrolysis method. The crystalline phase, morphology, and atomic composition were characterized effectively through different physicochemical techniques. The fabricated device exhibits bipolar resistive switching behavior with switching voltage below +/- 2 V, an HRS/LRS ratio of >10, good endurance of 150 cycles, and retention over 104 s. The beta and x63% factors of Weibull distribution suggest the good operational uniformity of the device. The results suggest that ZnWO4-based RRAM can be a potential candidate for non-volatile applications.
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页数：4
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