Spray deposited zinc tungstate thin film for non-volatile memory application

被引：10
|
作者：
Patil, Amitkumar R. [1 ]
Dongale, Tukaram D. [2 ]
Kamat, Rajanish K. [3 ]
Rajpure, Keshav Y. [1 ]
机构：
[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India
[2] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur 416004, Maharashtra, India
[3] Shivaji Univ, Dept Elect, Kolhapur 416004, Maharashtra, India
来源：
MATERIALS LETTERS | 2022年 / 322卷
关键词：
Resistive switching; Thin films; Rietveld ?s refinement; Electrical properties; Non-volatile memory;
D O I：
10.1016/j.matlet.2022.132494
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Ag/ZWO/FTO resistive switching (RS) device was fabricated using the chemical spray pyrolysis method. The crystalline phase, morphology, and atomic composition were characterized effectively through different physicochemical techniques. The fabricated device exhibits bipolar resistive switching behavior with switching voltage below +/- 2 V, an HRS/LRS ratio of >10, good endurance of 150 cycles, and retention over 104 s. The beta and x63% factors of Weibull distribution suggest the good operational uniformity of the device. The results suggest that ZnWO4-based RRAM can be a potential candidate for non-volatile applications.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Exploring non-stoichiometric SiOx thin film for non-volatile memory application
    Laishram, Rubila
    Alam, Mir Waqas
    Souayeh, Basma
    Singh, Naorem Khelchand
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 978
  • [2] An organic thin film transistor based non-volatile memory with zinc oxide nanoparticles
    Lee, W. K.
    Aw, K. C.
    Wong, H. Y.
    Chan, K. Y.
    Leung, M.
    Salim, N. Tjitra
    THIN SOLID FILMS, 2011, 519 (15) : 5208 - 5211
  • [3] Programmable polymer thin film and non-volatile memory device
    Jianyong Ouyang
    Chih-Wei Chu
    Charles R. Szmanda
    Liping Ma
    Yang Yang
    Nature Materials, 2004, 3 : 918 - 922
  • [4] Programmable polymer thin film and non-volatile memory device
    Ouyang, JY
    Chu, CW
    Szmanda, CR
    Ma, LP
    Yang, Y
    NATURE MATERIALS, 2004, 3 (12) : 918 - 922
  • [5] Evaluation methodology of thin dielectrics for non-volatile memory application
    Ghidini, G
    Brazzelli, D
    MICROELECTRONICS RELIABILITY, 2002, 42 (9-11) : 1473 - 1480
  • [6] The microstructure investigation of GeTi thin film used for non-volatile memory
    Shen, Jie
    Liu, Bo
    Song, Zhitang
    Xu, Cheng
    Liang, Shuang
    Feng, Songlin
    Chen, Bomy
    APPLIED SURFACE SCIENCE, 2008, 254 (15) : 4638 - 4643
  • [7] PLZT THIN-FILM GATE NON-VOLATILE MEMORY FET
    MATSUI, Y
    HIGUMA, Y
    OKUYAMA, M
    NAKAGAWA, T
    HAMAKAWA, Y
    FERROELECTRICS, 1978, 19 (3-4) : 166 - 166
  • [8] Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application
    Cheong, Kuan Yew
    Tayeb, Ilias Ait
    Zhao, Feng
    Abdullah, Jafri Malin
    NANOTECHNOLOGY REVIEWS, 2021, 10 (01) : 680 - 709
  • [9] Spray-pyrolysis deposited La1-xSrxCoO3 thin films for potential non-volatile memory applications
    Viskadourakis, Z.
    Mihailescu, C. N.
    Kenanakis, G.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (01):
  • [10] Reversible resistance switching of GeTi thin film used for non-volatile memory
    Shen, Jie
    Xu, Cheng
    Liu, Bo
    Song, Zhitang
    Wu, Liangcai
    Feng, Songlin
    Chen, Bomy
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (1-3): : L1 - L3
12345