Interlayer Excitonic Spectra of Vertically Stacked MoSe2/WSe2 Heterobilayers

被引:11
|
作者
Gillen, Roland [1 ]
机构
[1] Friedrich Alexander Univ Erlangen Nurnberg, Dept Phys, Staudtstr 7, D-91058 Erlangen, Germany
来源
关键词
Bethe– Salpeter calculations; exciton g-factors; exciton lifetimes; interlayer excitons; transition-metal dichalcogenide heterostructures; TRANSITION-METAL DICHALCOGENIDES; DER-WAALS HETEROSTRUCTURES; BINDING-ENERGY; MONOLAYER MOS2; TRIONS; PHOTOLUMINESCENCE; SINGLE; LIGHT; ABSORPTION; SEMICONDUCTORS;
D O I
10.1002/pssb.202000614
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The optical spectra of vertically stacked MoSe2/WSe2 heterostructures contain additional "interlayer" excitonic peaks that are absent in the individual monolayer materials and exhibit a significant spatial charge separation in out-of-plane direction. A many-body perturbation theory approach is used to simulate the excitonic spectra of MoSe2/WSe2 heterobilayers with three stacking orders, considering both momentum-direct and momentum-indirect excitons. The small oscillator strengths and the optical responses of the interlayer excitons are significantly stacking-dependent and give rise to high radiative lifetimes in the range of 5-200 ns at low temperature for the "bright" interlayer excitons. Solving the finite-momentum Bethe-Salpeter Equation (BSE), the lowest energy excitation is predicted to be an exciton over the fundamental indirect band gap, with a binding energy of 220 meV. However, in agreement with recent magneto-optics experiments and previous theoretical studies, the simulations of the effective excitonic g-factors suggest that the low energy momentum-indirect excitons are not experimentally observed. The existence of "interlayer" C excitons with significant exciton binding energies and optical oscillator strengths is further revealed, which are analogous to the prominent band nesting excitons in mono- and few-layer transition-metal dichalcogenides.
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页数:19
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