Fermi-level-pinning defects in highly n-doped silicon

被引：94

作者：

Chadi, DJ ^{[1
]}

Citrin, PH ^{[1
]}

Park, CH ^{[1
]}

Adler, DL ^{[1
]}

Marcus, MA ^{[1
]}

Gossmann, HJ ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.79.4834

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Eased on first-principles calculations and analysis of x-ray absorption measurements, an unconventional mechanism is proposed for the saturation of carriers in highly it-doped Si. The mechanism is Fermi-level pinning from a new class of defect centers containing two separated but interacting dopant atoms with no associated Si vacancies. The number of such centers increases sharply at high doping levels. A simple model provides very good agreement with the maximum carrier concentrations observed, in Si.

引用

页码：4834 / 4837

页数：4

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