Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs

被引：4

作者：

Liu, Kuan-Ju ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Yang, Ren-Ya ^{[3
]}

Chen, Ching-En ^{[4
]}

Ho, Szu-Han ^{[4
]}

Tsai, Jyun-Yu ^{[1
]}

Hsieh, Tien-Yu ^{[1
]}

Cheng, Osbert ^{[5
]}

Huang, Cheng-Tung ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[5] United Microelect Corp, Device Dept, Hsinchu, Taiwan

来源：

THIN SOLID FILMS | 2014年 / 572卷

关键词：

Floating body effect (FBE); Hot carrier effect (HCE); Silicon-on-insulator (SOI); RANDOM-ACCESS MEMORY; HOPPING CONDUCTION; OXIDE; MODEL; RRAM; ORIGIN; CHANNEL;

D O I：

10.1016/j.tsf.2014.08.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-oninsulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that under grounded body (GB) operation due to the floating body effect (FBE). Furthermore, the degradation is independent on temperature under GB operation, because impact ionization is virtually independent on temperature under large VD. However, the degradation under FB operation becomes less serious with increasing temperature. This is due to a smaller source/body PN junction band offset at a high temperature, which causes fewer accumulated holes at the body terminal and reduces the FBE. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：39 / 43

页数：5

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