The Optical Dielectric Function in Monolithic BaxSr1-xTiO3 Films

被引:0
|
作者
Bruzzese, D. [1 ]
Fahnestock, K. J. [1 ]
Schauer, C. L. [1 ]
Spanier, J. E. [1 ]
Weiss, C. V. [2 ]
Alpay, S. P. [2 ]
Cole, M. W. [3 ]
Sbrockey, N. M. [4 ]
Tompa, G. S. [4 ]
机构
[1] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] Univ Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
[3] USA, Res Lab, Aberdeen Proving Ground, MD 20783 USA
[4] Struct Mat Ind Inc, Piscataway, NJ 08854 USA
关键词
Ferroelectric thin films; phase shifters; BST; spectroscopic ellipsometry; optical dielectric function; TUNABLE DEVICE APPLICATIONS; (BA; SR)TIO3; THIN-FILMS; MOCVD;
D O I
10.1080/10584580903586646
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the results of characterization and analysis of the optical dielectric function of monolithic BaxSr1-xTiO3 films prepared by metal-organic solution deposition (MOSD). Lorentz Oscillator + Drude parameters and band gap for selected compositions are determined from variable-angle spectroscopic ellipsometry. Variation of the complex optical dielectric function is seen, and the results suggest that spectroscopic ellipsometry can be an effective means of both ex situ analysis and in situ monitoring of film composition during other BST and related film material growth processes.
引用
收藏
页码:27 / 36
页数:10
相关论文
共 50 条
  • [31] MOCVD Growth of Compositionally Graded BaxSr1-xTiO3 Thin Films
    Sbrockey, N. M.
    Cole, M. W.
    Kalkur, T. S.
    Luong, M.
    Spanier, J. E.
    Tompa, G. S.
    INTEGRATED FERROELECTRICS, 2011, 126 : 21 - 27
  • [32] Electrical properties of thin BaxSr1-xTiO3 films for microwave applications
    Razumov, SV
    Tumarkin, AV
    TECHNICAL PHYSICS LETTERS, 2000, 26 (08) : 705 - 706
  • [33] Giant piezoelectric property of (110) oriented BaxSr1-xTiO3 films
    Chen, Z. H.
    Chen, Z.
    Qiu, J. H.
    Yuan, N. Y.
    Ding, J. N.
    SOLID STATE COMMUNICATIONS, 2017, 266 : 16 - 20
  • [34] Influence of electron irradiation on the properties of ferroelectric BaxSr1-xTiO3 films
    Pavlovskaja, MV
    Balakin, VA
    Dedyk, AI
    Karmanenko, SF
    Sakharov, VI
    Serenkov, IT
    INTEGRATED FERROELECTRICS, 2004, 61 : 149 - 153
  • [35] Microstructure of BaxSr1-xTiO3 thin films grown on sapphire substrates
    Rafaja, D
    Kub, J
    Simek, D
    Lindner, J
    Petzelt, J
    THIN SOLID FILMS, 2002, 422 (1-2) : 8 - 13
  • [36] Dielectric properties and ferroelectric phase transitions in BaxSr1-xTiO3 solid solution
    Abdelkefi, H
    Khemakhem, H
    Vélu, G
    Carru, JC
    Von der Mühll, R
    JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 399 (1-2) : 1 - 6
  • [37] AC Conductivity and Dielectric Relaxation Behavior of Sol-gel BaxSr1-xTiO3 Thin Films
    Ala eddin A. Saif
    P. Poopalan
    Journal of Materials Science & Technology, 2011, 27 (09) : 802 - 808
  • [38] Influence of Mg and Mn doping on the RF-microwave dielectric properties of BaxSr1-xTiO3 films
    Dedyk, AI
    Karmanenko, SF
    Melkov, AA
    Pavlovskaya, MV
    Sakharov, VI
    Serenkov, IT
    FERROELECTRICS, 2003, 286 : 989 - 1000
  • [39] AC Conductivity and Dielectric Relaxation Behavior of Sol-gel BaxSr1-xTiO3 Thin Films
    Saif, Ala'eddin A.
    Poopalan, P.
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2011, 27 (09) : 802 - 808
  • [40] Dielectric and pyroelectric properties of BaxSr1-xTiO3:: Quantum effect and phase transition
    Wu, H
    Shen, WZ
    PHYSICAL REVIEW B, 2006, 73 (09)