Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

Ultrathin ZrO2 gate dielectrics have been deposited on strain-compensated Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. High-resolution transmission electron microscopy along with energy-dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy show the formation of a polycrystalline ZrO2 and an amorphous Zr-germano-silicate interfacial layer between the deposited oxide and SiGeC films. A dielectric constant of 17.5 for ZrO2 and 7.0 for an interfacial-silicate layer have been calculated from the high-frequency capacitance-voltage measurements. These dielectrics show an equivalent oxide thickness as low as 1.9 nm for ZrO2 and 2.0 nm for the interfacial silicate layer. An extremely low leakage current density of similar to9x10(-8) A/cm(2) at a gate voltage of -1.0 V, breakdown field of 7 MV/cm and moderate interface state density of 6x10(11) cm(-2) eV(-1) have been obtained for the fabricated capacitors. (C) 2003 American Institute of Physics.