A Bi-directional Electric Field Enhanced Field Stop Reverse Blocking IGBT

被引：0

作者：

Yang, Wentao ^{[1
]}

Li, Zehong ^{[1
]}

Jia, Yaoyao ^{[1
]}

Zhang, Jinping ^{[1
]}

Ren, Min ^{[1
]}

Chen, Weizhong ^{[1
]}

Chen, Qian ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2014年

关键词：

Reverse Blocking Insulated Gate Bipolar Transistor; Field Stop; Electric Field Enhancement; Carrier Store Effect;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a novel Bi-directional Electric Field Enhanced Field Stop Reverse Blocking Insulated Gate Bipolar Transistor (BEFE-FS-RB-IGBT) is proposed. It features N-type field stop layers and P-type electric field enhancement regions in both top trench MOS cell part and the anode side of the device. From the simulation results, the thickness of the drift region can be reduced to 58 mu m, only 70% of the conventional counterpart, while maintaining 820V and 818V in forward and reverse blocking conditions, respectively. The blocking capability is 15% higher than the conventional one. Moreover, due to the carrier-storage effect, the carrier distribution during the on-state can be optimized. As a result, the proposed one has a lower onstate voltage (1.15V, 20% drop) and a less turn-off power loss (5.4mJ/cm2, 39% decrease) as well.

引用

页码：39 / 42

页数：4

共 50 条

[1] ON THE BI-DIRECTIONAL TOROIDAL FIELD OF A SPHERICAL ROTAMAK
XU, S
BROTHERTONRATCLIFFE, D
PLASMA PHYSICS AND CONTROLLED FUSION, 1988, 30 (13) : 1905 - 1938
[2] Design and Experiment of Bi-directional Ridger for Paddy Field
Wang J.
Weng W.
Liu J.
Wang J.
Mo Y.
Na M.
Nongye Jixie Xuebao/Transactions of the Chinese Society for Agricultural Machinery, 2019, 50 (02): : 40 - 48
[3] Enhanced dual-mode electrochemical zinc ion sensing by electric field-driven bi-directional mass transport
Huang, Yuzhen
Zhang, Kai
Chen, Xiaoshuang
Yan, Xiaohui
Qiu, Jiaoyan
Zhang, Yu
Han, Lin
CHEMICAL ENGINEERING JOURNAL, 2023, 475
[4] Bi-directional ultrafast electric-field gating of interlayer charge transport in a cuprate superconductor
Dienst, A.
Hoffmann, M. C.
Fausti, D.
Petersen, J. C.
Pyon, S.
Takayama, T.
Takagi, H.
Cavalleri, A.
NATURE PHOTONICS, 2011, 5 (08) : 485 - 488
[5] Gradient field bi-directional GDIM for optical flow estimation
Pei, Ji-Hong
Lu, Zong-Qing
Xie, Wei-Xin
Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2007, 35 (07): : 1301 - 1305
[6] On vibration of bi-directional functionally graded nanobeams under magnetic field
Barati, Abbas
Hadi, Amin
Nejad, Mohammad Zamani
Noroozi, Reza
MECHANICS BASED DESIGN OF STRUCTURES AND MACHINES, 2022, 50 (02) : 468 - 485
[7] Bi-directional migration of lens epithelial cells in a physiological electrical field
Wang, ET
Zhao, M
Forrester, JV
McCaig, CD
EXPERIMENTAL EYE RESEARCH, 2003, 76 (01) : 29 - 37
[8] Reverse blocking IGCT optimised for 1 kV DC bi-directional solid state circuit breaker
Vemulapati, Umamaheswara
Arnold, Martin
Rahimo, Munaf
Antoniazzi, Antonello
Pessina, Davide
IET POWER ELECTRONICS, 2015, 8 (12) : 2308 - 2314
[9] Highly Sensitive Resonant Bi-Directional Magnetic Field Micro-Sensor
Alcheikh, N.
Ben Mbarek, S.
Younis, M., I
2021 IEEE 16TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS), 2021, : 425 - 428
[10] A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor
Yang, Yingchen
Feng, Sirui
Zhou, Zongjie
Chen, Tao
Wu, Zheng
Du, Yangming
Ng, Yat Hon
Liao, Hang
Huang, Yumeng
Wang, Heng
Zheng, Zheyang
Chen, Kevin J.
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 343 - 346

← 1 2 3 4 5 →