Self - Organized si dots on ge substrates

被引：0
|
作者：
Pachinger, D. [1 ]
Lichtenberger, H. [1 ]
Schaeffler, F. [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, Altenbergerstr 69, A-4040 Linz, Austria
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
self-assembled; growth kinetics; ordered islands; pre-patterned;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.
引用
收藏
页码：87 / +
页数：2
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