Self - Organized si dots on ge substrates

被引：0
|
作者：
Pachinger, D. [1 ]
Lichtenberger, H. [1 ]
Schaeffler, F. [1 ]
机构：
[1] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, Altenbergerstr 69, A-4040 Linz, Austria
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
self-assembled; growth kinetics; ordered islands; pre-patterned;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.
引用
收藏
页码：87 / +
页数：2
相关论文
共 50 条
  • [1] Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates
    Jin, G
    Liu, JL
    Luo, YH
    Wang, KL
    THIN SOLID FILMS, 2000, 369 (1-2) : 49 - 54
  • [2] Flower-like distributed self-organized Ge dots on patterned Si (001) substrates
    Lee, HM
    Yang, TH
    Luo, GL
    Chang, EY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (6B): : L718 - L720
  • [3] Flower-like distributed self-organized Ge dots on patterned Si (001) substrates
    Lee, H.-M. (hml.mse90g@nctu.edu.tw), 1600, Japan Society of Applied Physics (42):
  • [4] Self organization of Ge dots on Si substrates: influence of misorientation
    Abdallah, M
    Berbezier, I
    Dawson, P
    Serpentini, M
    Bremond, G
    Joyce, B
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 256 - 261
  • [5] Self organization of Ge dots on Si substrates: influence of misorientation
    Abdallah, M
    Berbezier, I
    Dawson, P
    Serpentini, M
    Bremond, G
    Joyce, B
    THIN SOLID FILMS, 1998, 336 (1-2) : 256 - 261
  • [6] Optical properties of Ge self-organized quantum dots in Si
    Physical Review B: Condensed Matter, 57 (15):
  • [7] Optical properties of Ge self-organized quantum dots in Si
    Peng, CS
    Huang, Q
    Cheng, WQ
    Zhou, JM
    Zhang, YH
    Sheng, TT
    Tung, CH
    PHYSICAL REVIEW B, 1998, 57 (15): : 8805 - 8808
  • [8] Self-organized Ge quantum wires on Si(111) substrates
    Jin, G
    Tang, YS
    Liu, JL
    Wang, KL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04): : 1406 - 1409
  • [9] Self-organized growth of Ge islands on Si(100) substrates
    Pivac, B
    Kovacevic, I
    Dubcek, P
    Radic, N
    Bernstorff, S
    Slaoui, A
    THIN SOLID FILMS, 2006, 511 (153-156) : 153 - 156
  • [10] Research progress of self-organized Ge quantum dots on Si substrate
    HUANG Changjun
    ProgressinNaturalScience, 2004, (05) : 14 - 21
12345