Circuit techniques for organic and amorphous semiconductor based field effect transistors

被引：0

作者：

Sambandan, Sanjiv ^{[1
]}

Nathan, Arokia ^{[1
]}

机构：

[1] Univ Waterloo, ECE, Waterloo, ON N2L 3G1, Canada

来源：

ESSDERC 2006: PROCEEDINGS OF THE 36TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field effect transistors (FETs) built with noncrystalline semiconductors, such as amorphous hydrogenated silicon (a-Si:H) and organic thin film transistors(TFTs) are of immense interest in the development of large area sensor and display systems [1]-[3]. However, these FETs have a time variant threshold voltage due to bulk and interfacial charge trapping, and hence, to-date these devices have been mostly used as switches. This paper identifies circuit techniques to enable time invariant transfer characteristics using these devices, thereby enabling versatile analog design.

引用

页码：69 / +

页数：2

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