Electrical properties of low-temperature processed PZT thin films with preferred orientations

Ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) thin films with preferred orientations were successfully deposited on the Pt/Ti/SiO2/Si wafer at low temperature of 525 degreesC by the chemical solution deposition from molecular-designed precusor solution with 20 mol % excess lead than a stoichiometric composition. The composition of the resultant PZT thin films showed slightly lead excess than a stoichiometric composition. In addition, orientation of the resultant PZT thin films could be controlled by changing the pre-annealing temperature or insertion of thin PbO layer, which affected the interfacial state between Pt electrode and PZT thin films. The electrical properties of the resultant PZT thin films were also affected by the orientation of the resultant films. As a result, orientation of the low-temperature processed PZT thin films had large effect on the electrical properties of the resultant films.