Tunable interfacial properties of epitaxial graphene on metal substrates

被引：112
|
作者：
Gao, Min [1 ]
Pan, Yi [1 ]
Zhang, Chendong [1 ]
Hu, Hao [1 ]
Yang, Rong [1 ]
Lu, Hongliang [1 ]
Cai, Jinming [1 ]
Du, Shixuan [1 ]
Liu, Feng [2 ]
Gao, H. -J. [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期
基金：
美国国家科学基金会;
关键词：
density functional theory; epitaxial layers; graphene; interface states; nickel; platinum; ruthenium; scanning tunnelling microscopy; semiconductor-metal boundaries; substrates; thermoelectricity; P-N-JUNCTIONS; ROOM-TEMPERATURE; TRANSISTORS; MICROSCOPY; TRANSPORT; SHEETS; FIELD;
D O I：
10.1063/1.3309671
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni(111), Pt(111), and Ru(0001), show different interactions with the epitaxially grown graphene at the interfaces. The different interfacial interaction making graphene n-type and p-type doped, leads to the polarity change of the thermoelectric property of the graphene/metal systems. These findings may give further insights to the interfacial interactions in the graphene/metal systems and promote the use of graphene-based heterostructures in devices.
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页数：3
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