AN OPTIMUM DESIGN OF HIGH-POWER AMPLIFIER WITH HIGH EFFICIENCY USING A REALIZABLE HARMONIC LOADING CIRCUIT

被引：0
|
作者：
Moon, Junghwan [1 ]
Kim, Jangheon [1 ]
Kim, Jungjoon [1 ]
Kim, Ildu [1 ]
Kim, Bumman [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 790784, Gyeongbuk, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 04期
关键词：
efficiency; GaN HEMT; power amplifier (PA); worldwide interoperability for microwave access (WiMAX);
D O I：
10.1002/mop.25032
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An optimum design approach for a highly efficient power amplifier(PA) using a packaged high-power device is described. Large fundamental load impedance assisted by a simple second harmonic manipulation is explored to improve the efficiency, when maintaining the power density. For demonstration of the performance, the PA is implemented using GaN HEMT device at 2.655 GHz. In the experiment, the fabricated PA achieves power-added efficiency (PAE) of 64.3% (it the saturated output power of 49.2 dBm. For 802.16e mobile worldwide interoperability for microwave access signal, the PA delivers the PAE of similar to 31% and ACLR of -49 dBe at the 10 (113 backed-off power of 40 dBm after the digital feedback predistortion linearization. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 818-822, 2010: Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25032
引用
收藏
页码：818 / 822
页数：5
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