Direct mapping and characterization of the surface local field in InGaAs/ InP avalanche photodetectors

被引：2
|
作者：
Li, Qing [1 ,2 ]
He, Ting [1 ,2 ]
Zhang, Kun [2 ,3 ]
Xiao, Yunlong [1 ]
Deng, Ke [1 ]
Miao, Jinshui [1 ]
Li, Ning [1 ]
Wang, Wenjuan [2 ]
Lu, Wei [1 ,2 ]
机构：
[1] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
来源：
INFRARED PHYSICS & TECHNOLOGY | 2022年 / 123卷
基金：
中国国家自然科学基金; 国家重点研发计划; 中国博士后科学基金;
关键词：
Avalanche photodetectors; InGaAs; InP photodetectors; Guard rings; Scanning photocurrent microscopy; DARK CURRENT; CROSSTALK; DETECTORS;
D O I：
10.1016/j.infrared.2022.104162
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this paper, InGaAs/InP avalanche photodetectors with a variety of guard ring structures are investigated. The electric distribution in the device is characterized by experiment and simulation methods to better understand the dark current mechanisms. It is found that deeper guard rings are more effective in preventing edge break-down for the depressed lateral electric field. Scanning photocurrent microscopy measurement is used to char-acterize the effect of guard ring on InP layer. Our results show that deep guard ring design can reduce the surface electric field. In addition, the 1550 nm response distribution of optimized photodetectors under different operating modes is measured and compared. It shows guard ring can inhibit the edge breakdown. This work demonstrates the significance of guard ring designs of InGaAs/InP avalanche photodetectors, and the charac-terization method will provide an effective way to understand the source of the current generation mechanism.
引用
收藏
页数：5
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