Generation of terahertz radiation in thin vanadium dioxide films undergoing metal-insulator phase transition

被引：0

作者：

Solyankin, Petr M. ^{[1
]}

Esaulkov, Mikhail N. ^{[2
]}

Sidorov, Artem Yu. ^{[1
]}

Shkurinov, Alexander P. ^{[1
]}

Luo, Qin ^{[3
]}

Zhang, Xi-Cheng ^{[4
]}

机构：

[1] Moscow MV Lomonosov State Univ, Moscow 119991, Russia

[2] RAS, Inst Laser & Informat Technol, Shatura 140700, Russia

[3] Huazhong Univ Sci & Technol, Wuhan 430074, Peoples R China

[4] Univ Rochester, Rochester, NY 14627 USA

来源：

2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) | 2015年

关键词：

VO2;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Generation of terahertz (THz) radiation was observed in epitaxial VO2 films grown on R-and C-cut sapphire substrates above and below the metal-insulator phase transition temperature. Polarization analysis of the emitted THz radiation reveals strong in-plane anisotropy of the conductive phase of VO2 which is not observed for insulating phase, generation efficiency increases up to 30 times after phase transition. Properties of generated THz radiation in VO2 are defined by the displacement photocurrent at the film-air and film-substrate interfaces.

引用

页数：2

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