Applications of Scanning Electrical Force Microscopy

被引：8
|
作者：
Muller, F [1 ]
Muller, AD [1 ]
Hietschold, M [1 ]
Kammer, S [1 ]
机构：
[1] TOPOMETRIX CORP,SANTA CLARA,CA 95054
来源：
MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期
关键词：
D O I：
10.1016/S0026-2714(97)00127-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The capabilities of Scanning Electrical Force Microscopy (SEFM) based on non-contact AFM (atomic force microscopy) concerning the characterization of microelectronic structures of silicon are presented. Surface potential differences due to carrier generation and capacitance differences due to oxide layers are discussed at examples of lateral and cross-sectional images of a resistance and a MOS-structure. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：1631 / 1634
页数：4
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