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Electrical characteristics and lifetimes of microdischarge devices having thin dielectric films of aluminum oxide, boron nitride, or barium titanate
被引:13
|作者:
Park, SJ
[1
]
Eden, JG
[1
]
机构:
[1] Univ Illinois, Dept Elect & Comp Engn, Lab Opt Phys & Engn, Urbana, IL 61801 USA
关键词:
D O I:
10.1049/el:20030430
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The electrical (V-I) characteristics, radiative efficiencies, and lifetimes of Ni screen/dielectric/Ni microdischarge devices, having overall thicknesses as small as <100 mum and cylindrical microchannels 50-150 pm in diameter, are investigated for Al2O3, BN, and BaTiO3 dielectric films that are 120 or 200 mum, 30 mum, and 5 mum in thickness, respectively. Having dielectrics fabricated by sol-gel processes or colloidal deposition and operated with Ne gas pressures between 300 and 1200 Torr (300K), these devices operate at voltages as low as similar to93 V (100 mum dia. BaTiO3 device), and exhibit exceptional stability and lifetimes. After 100 h of continuous operation, a Ni screen/30 mum BN/Ni device operating in 700 Torr Ne (static gas fill) at 100 V produces similar to98% of its initial radiant output.
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页码:773 / 775
页数:3
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