Contamination control in 300mm foundry

被引：0

作者：

Hsu, HJ ^{[1
]}

Chen, IC ^{[1
]}

Jann, L ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

来源：

2002 SEMICONDUCTOR MANUFACTURING TECHNOLOGY WORKSHOP | 2002年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In the normal wafer process flow, the contamination problem must not happen except a little of RD research lots. In 300mm FAB, we put multiple lots in a carrier to improve the operation efficiency. This feature reduces the cost but increase the risk of contamination disaster very much. A lot coated with the photo resist must be prevented from entering a furnace. The mixed frond-end and back-end processed lots could have contamination issue after study. New research material, like Cooper, will affect the yield if they are not separated with aluminum. All of them are the scope of the contamination control.

引用

页码：212 / 214

页数：3

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