Moderate-Temperature Near-Field Thermophotovoltaic Systems with Thin-Film InSb Cells

被引：9

作者：

Wang, Rongqian ^{[1
,2
]}

Lu, Jincheng ^{[1
,2
,3
]}

Jiang, Jian-Hua ^{[1
,2
]}

机构：

[1] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China

[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China

[3] Tongji Univ, Ctr Phonon & Thermal Energy Sci, China EU Joint Ctr Nanophonon, Sch Phys Sci & Engn,Shanghai Key Lab Special Arti, Shanghai 200092, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2021年 / 38卷 / 02期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

RADIATIVE HEAT-TRANSFER; MODES; EFFICIENCY; LIMIT;

D O I：

10.1088/0256-307X/38/2/024201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Near-field thermophotovoltaic systems functioning at 400-900 K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb p-n junctions are investigated theoretically. The performances of two near-field systems with different emitters are examined carefully. One near-field system consists of a graphene-hexagonal-boron-nitride-graphene sandwiched structure as the emitter, while the other system has an emitter made of the double graphene-hexagonal-boron-nitride heterostructure. It is shown that both systems exhibit higher output power density and energy efficiency than the near-field system based on mono graphene-hexagonal-boron-nitride heterostructure. The optimal output power density of the former device can reach 1.3 x 10(5) W/m(2), while the optimal energy efficiency can be as large as 42% of the Carnot efficiency. We analyze the underlying physical mechanisms that lead to the excellent performances of the proposed near-field thermophotovoltaic systems. Our results are valuable toward high-performance moderate temperature thermophotovoltaic systems as appealing thermal-to-electric energy conversion (waste heat harvesting) devices.

引用

页数：7

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