1/f noise in single-walled carbon nanotube devices

被引：123
|
作者：
Snow, ES [1 ]
Novak, JP [1 ]
Lay, MD [1 ]
Perkins, FK [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期
关键词：
D O I：
10.1063/1.1812838
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the scaling behavior of 1/f noise in single-walled carbon nanotube devices. In this study we use two-dimensional carbon nanotube networks to explore the geometric scaling of 1/f noise and find that for devices of a given resistance the noise scales inversely with device size. We have established an empirical formula that describes this behavior over a wide range of device parameters that can be used to assess the noise characteristics of carbon nanotube-based electronic devices and sensors. (C) 2004 American Institute of Physics.
引用
收藏
页码：4172 / 4174
页数：3
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