Bipolariton laser emission from a GaAs microcavity

被引：0
|
作者：
Moreira, L. M. [1 ]
Gonzalez, J. C. [1 ]
Oliveira, A. G. [1 ]
Matinaga, F. M. [1 ]
机构：
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2 | 2007年 / 4卷 / 02期
关键词：
D O I：
10.1002/pssc.200673305
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Biexciton emission properties were studied in a single GaAs quantum well(QW) semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser like behavior. Very small linewidths were measured, lying below 110 geV and 150 geV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Varying the pump laser polarization, we were able to show the selection rules for the biexciton particle creation in the quantum well. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：622 / +
页数：2
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