Parasitic Resistance Modeling and Optimization for 10nm-node FinFET

A TCAD-based study on the parasitic resistance (R-parasitics) of 10nm FinFET is perfolined. A total parasitic resistance of 1490 Omega/Fin is extracted using calibrated physical models, and the components of the R-parasitics are evaluated. It is observed that by introducing wraparound contact and highly doped source/drain, contact resistance (R-contact) of lOnm FinFET is well minimized and current crowding in the fin is suppressed. It is also found that the resistance of the lightly doped spacer region (R-spacer) constitutes more than 50% of total R-parasitics and can be optimized by introducing highly doped segments. With the optimized doping profile in the spacer, drain current (I-D) and intrinsic gain (A(V)) can be improved by 11% and 16%, respectively. In the case for 7nm-node FinFET, it was concluded that further R-contact reduction is also needed to optimize its perfounance.