Adsorption and diffusion of Si adatom on hydrogenated Si(100) surfaces

被引：69
|
作者：
Jeong, S
Oshiyama, A
机构：
[1] Institute of Physics, University of Tsukuba, Tsukuba, 305, Tennodai
来源：
PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.79.4425
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present first-principles total-energy calculations which provide a detailed picture of adsorption and diffusion of a Si adatom on hydrogenated Si(100) surfaces. We find that the adatom spontaneously substitutes for the H atom upon adsorption. We also find that the pathways and barriers of the adatom diffusion are sensitive to H coverage. Calculated results are consistent with H-induced variation in morphology of overlayers observed in epitaxial growth.
引用
收藏
页码：4425 / 4428
页数：4
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