Adsorption and diffusion of Si adatom on hydrogenated Si(100) surfaces

被引：69

作者：

Jeong, S

Oshiyama, A

机构：

[1] Institute of Physics, University of Tsukuba, Tsukuba, 305, Tennodai

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.79.4425

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present first-principles total-energy calculations which provide a detailed picture of adsorption and diffusion of a Si adatom on hydrogenated Si(100) surfaces. We find that the adatom spontaneously substitutes for the H atom upon adsorption. We also find that the pathways and barriers of the adatom diffusion are sensitive to H coverage. Calculated results are consistent with H-induced variation in morphology of overlayers observed in epitaxial growth.

引用

页码：4425 / 4428

页数：4

共 50 条

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