Simulation and experimental research of a high-order Bragg grating semiconductor laser

被引：0
|
作者：
Siyu, E. [1 ,2 ]
Zhou, YinLi [1 ]
Zhang, Xing [1 ]
Zhang, Jianwei [1 ]
Zeng, Yugang [1 ]
Cui, Jinjiang [3 ,4 ]
Liu, Yun [1 ]
Ning, Yongqiang [1 ]
Wang, Lijun [1 ]
机构：
[1] Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Biomed Engn & Technol, Suzhou 215163, Peoples R China
[4] Jinan Guoke Med Sci & Technol Dev Co Ltd, Jinan 250000, Peoples R China
来源：
APPLIED OPTICS | 2021年 / 60卷 / 21期
基金：
中国国家自然科学基金;
关键词：
DBR LASER; LINEWIDTH; NM;
D O I：
10.1364/AO.432175
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, the influence of the epitaxial structure on distributed Bragg reflector (DBR) grating characteristics is studied by simulation analysis. Comparative analysis shows that the symmetrical epitaxial structure can achieve a lower threshold current and, thus, a higher power. Based on the simulated structure, a DBR laser based on a symmetric epitaxial structure was fabricated, and a single longitudinal mode laser output at similar to 1060 nm was obtained. The maximum power was 104.5mW, and the side mode suppression ratio (SMSR) is 43 dB. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：6076 / 6079
页数：4
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