Memory Devices for Flexible and Neuromorphic Device Applications

被引:16
|
作者
Kim, Dongshin [1 ]
Kim, Ik-Jyae [1 ]
Lee, Jang-Sik [1 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea
基金
新加坡国家研究基金会;
关键词
2D materials; electrochemical devices; flexible electronics; memory devices; neuromorphic applications; perovskite materials; ORGANOMETAL TRIHALIDE PEROVSKITE; TERM SYNAPTIC PLASTICITY; GRAPHENE OXIDE SYNTHESIS; BLACK PHOSPHORUS; SOL-GEL; ARTIFICIAL SYNAPSES; HALIDE PEROVSKITES; HIGH-CAPACITY; THIN-FILMS; NETWORKS;
D O I
10.1002/aisy.202000206
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Recently, consumer electronics have moved toward data-centric applications due to the development of smart electronic devices. Moreover, electronic devices have become highly portable, wearable, and lightweight. These devices require flexible data storage with high density. Furthermore, with the growing demand for larger memory capacity, faster processing speed, and complex data computation, neuromorphic devices have emerged as the next-generation memory technologies. To meet the needs of next-generation memory devices, memory devices based on emerging materials such as 2D, electrochemical, and perovskite materials are suggested. Herein, the recent progress in emerging materials-based memory devices for flexible and neuromorphic device applications is reviewed. First, the functions and mechanisms of emerging material-based memory devices are described. Second, applications for emerging material-based memory devices are reviewed. Finally, the challenges and prospects for the emerging material-based memory devices are discussed.
引用
收藏
页数:16
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