Experimental determination of the kurtosis of RF noise in microwave low-noise devices

被引:1
|
作者
Principato, F
Ferrante, G
机构
[1] Fac Ingn, Unita Palermo, INFM, I-90128 Palermo, Italy
[2] Univ Palermo, Dipartimento Fis & Tecnol Relat, I-90128 Palermo, Italy
关键词
Approximation theory - Spurious signal noise - White noise;
D O I
10.1016/S0026-2714(00)00057-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The degree of the Gaussian nature of the white noise present in microwave low-noise devices is experimentally investigated. The chosen experimental technique consists of simultaneously digitizing four versions of the noise which are amplified by four parallel independent amplifiers. The four independent signals are then used to compute the second, and, to a good approximation, the fourth moment of the noise. The ratio of the fourth moment to the square of the second moment is the kurtosis of the noise. Gaussian processes are characterized by a kurtosis equal to 3. A deviation from this value gives an indication about the degree of non-Gaussian nature of the noise. By using this technique, the effect of the additive noise introduced by the amplifiers is strongly reduced. In our experiments, the degree of the Gaussian nature of the white noise of some microwave devices is measured in the frequency range from 100 to 500 MHz, In all the investigated devices, the kurtosis is found to be very close to 3. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1929 / 1935
页数:7
相关论文
共 50 条
  • [31] GAAS MESFET, A LOW-NOISE MICROWAVE TRANSISTOR
    KNIEPKAMP, H
    SIEMENS REVIEW, 1977, 44 (09): : 412 - 417
  • [32] Low-noise microwave synthesis based on microcombs
    Jin, Xing
    Xiao, Shenyu
    Yang, Qifan
    CHINESE SCIENCE BULLETIN-CHINESE, 2024, 69 (12): : 1540 - 1551
  • [33] SUPERCONDUCTING LOW-NOISE MICROWAVE PARAMETERIC AMPLIFIER
    SMITH, AD
    SANDELL, RD
    BURCH, JF
    SILVER, AH
    MICROWAVE JOURNAL, 1985, 28 (05) : 82 - 82
  • [34] A LOW-NOISE MICROWAVE HEMT USING MOCVD
    TAKAKUWA, H
    TANAKA, K
    MORI, Y
    ARAI, M
    KATO, Y
    WATANABE, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 595 - 600
  • [35] MICROWAVE WAVEGUIDE SWITCH FOR A LOW-NOISE RADIOMETER
    GABDRAKIPOVA, MN
    ILIN, VA
    FATYKHOV, KZ
    ETKIN, VS
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1984, 27 (01) : 161 - 162
  • [36] LOW-NOISE DESIGN OF MICROWAVE TRANSISTOR AMPLIFIERS
    TUCKER, RS
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (08) : 697 - 700
  • [37] Low-noise transistor microwave reflex amplifier
    Tekshev, V.B.
    Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1993, 48 (11): : 82 - 86
  • [38] BEHAVIOUR OF A LOW-NOISE MICROWAVE FET AT LOW TEMPERATURE
    LORIOU, B
    BELLEC, M
    LEROUZIC, M
    ELECTRONICS LETTERS, 1970, 6 (25) : 819 - &
  • [39] LOW-NOISE MICROWAVE PARAMETRIC-AMPLIFIER
    SMITH, AD
    SANDELL, RD
    BURCH, JF
    SILVER, AH
    IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (02) : 1022 - 1028
  • [40] LOW-NOISE RECEIVER FOR MICROWAVE OZONE MEASUREMENTS
    Rozanov, S. B.
    Zavgorodniy, A. S.
    Logvinenko, S. V.
    Lukin, A. N.
    Shtanyuk, A. M.
    Bol'shakov, O. S.
    RADIOPHYSICS AND QUANTUM ELECTRONICS, 2012, 54 (8-9) : 638 - 647