Al0.2Ga0.3In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs Triple Heterostructure-Emitter Bipolar Transistor

被引：0
|
作者：
Tsai, Jung-Hui [1 ]
机构：
[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan
来源：
SCIENCE OF ADVANCED MATERIALS | 2016年 / 8卷 / 02期
关键词：
Heterostructure-Emitter; Bipolar Transistor; AlGaInP/InGaP/GaAs; Offset Voltage; Current Gain; INGAP/GAAS HBTS; OFFSET VOLTAGE; ALGAAS/GAAS;
D O I：
10.1166/sam.2016.2532
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A heterostructure-emitter bipolar transistor with Al0.2Ga03In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs triple heterostructure emitter is demonstrated by experimental results. The employment of a thin n-GaAs emitter layer at base emitter junction effectively decreases the potential spike at base-emitter and the collector-emitter offset voltage for low power consumption in circuit applications. While, the Al0.2Ga03In0.5P/Al0.1Ga0.4In0.5P/InGaP/GaAs triple heterostructure emitter is used to promote the hole confinement effect and current gain. Experimentally, the studied device exhibits a maximum current gain of 416 and a relatively low offset voltage of about 50 mV. Furthermore, a large current gain than 158 is achieved when the collector current is above 1.0 mA.
引用
收藏
页码：421 / 424
页数：4
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